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IRLI630GPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLI630GPBF規(guī)格書詳情
VDSS = 200V
RDS(on) = 0.40?
ID = 6.2A
描述 Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. 4.8mm
● Logic-Level Gate Drive
● RDS(ON) Specified at VGS = 4V & 5V
● Fast Switching
● Ease of paralleling
● Lead-free
產(chǎn)品屬性
- 型號：
IRLI630GPBF
- 功能描述：
MOSFET N-Chan 200V 6.2 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SILICONIXVISHAY |
23+ |
NA |
1000 |
電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨立分銷。原廠核心渠道 |
詢價 | ||
SILICONIXVISHAY |
24+ |
NA |
1000 |
原裝現(xiàn)貨,專業(yè)配單專家 |
詢價 | ||
IR |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
仙童 |
06+ |
TO-262 |
2500 |
原裝庫存 |
詢價 | ||
IR |
2018+ |
TO-220 |
11256 |
只做進口原裝正品!假一賠十! |
詢價 | ||
SILICONIXVISHAY |
22+ |
N/A |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
VISHAY/威世 |
25+ |
TO-220FP(TO-220FPAB) |
32360 |
VISHAY/威世全新特價IRLI630GPBF即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR |
2447 |
TO-220F |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IR |
23+ |
TO-220F-3 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
23+24 |
TO-220F |
59630 |
主營原裝MOS,二三級管,肖特基,功率場效應(yīng)管 |
詢價 |
