IRFZ48S中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFZ48S規(guī)格書詳情
描述 Description
Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated
產(chǎn)品屬性
- 型號：
IRFZ48S
- 功能描述：
MOSFET N-Chan 60V 50 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
300 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
24+ |
TO-220 |
36800 |
詢價 | |||
IR |
24+ |
TO-263 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價 | ||
IR |
23+ |
TO-263 |
35890 |
詢價 | |||
Vishay Siliconix |
2022+ |
TO-263-3,D2Pak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
IR |
2022+ |
TO-263 |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
IR |
23+ |
TO-263 |
7000 |
詢價 | |||
IR |
04+ |
TO-263 |
300 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
國產(chǎn) |
詢價 | ||
IR |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 |
