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IRFZ46ZSPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFZ46ZSPBF規(guī)格書詳情
描述 Description
This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
特性 Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFZ46ZSPBF
- 功能描述：
MOSFET 55V SINGLE N-CH 13.6mOhms 31nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
D2PAK |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
IR |
24+ |
D2-pak |
44 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
24+ |
TO-263 |
398 |
詢價 | |||
IR |
17+ |
TO-263 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
2022+ |
TO-263-3,D2Pak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
IR |
2022+ |
D2-pak |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
Infineon(英飛凌) |
2447 |
D2PAK |
115000 |
800個/卷一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
IR |
1923+ |
TO-263 |
5000 |
正品原裝品質(zhì)假一賠十 |
詢價 | ||
IR |
21+ |
TO263 |
1568 |
10年芯程,只做原裝正品現(xiàn)貨,歡迎加微信垂詢! |
詢價 |
