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IRFZ44VZSPBF規(guī)格書詳情
描述 Description
This HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
特性 Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFZ44VZSPBF
- 功能描述：
MOSFET MOSFT 60V 57A 12mOhm 43nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
TO-263 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
INFINEON/IR |
23+ |
TO-263-3 (D2PAK) |
50000 |
原裝正品 支持實單 |
詢價 | ||
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
Infineon/英飛凌 |
24+ |
D2PAK(TO-263) |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon/英飛凌 |
21+ |
D2PAK(TO-263) |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
Infineon/英飛凌 |
23+ |
D2PAK(TO-263) |
25630 |
原裝正品 |
詢價 | ||
Infineon/英飛凌 |
2022+ |
D2PAK(TO-263) |
48000 |
只做原裝,原裝,假一罰十 |
詢價 | ||
Infineon/英飛凌 |
24+ |
D2PAK(TO-263) |
8000 |
只做原裝，歡迎詢價，量大價優(yōu) |
詢價 | ||
Infineon(英飛凌) |
24+ |
TO-263 |
7828 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
INFINEON |
24+ |
TO-263 |
39500 |
進口原裝現(xiàn)貨 支持實單價優(yōu) |
詢價 |
