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IRFZ44NS

Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknown for,p

IRFZ44NS

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinasurfacemountingplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseins

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IRFZ44NS

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

IRFZ44NS

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchi

IRFZ44NS

55V N-Channel MOSFET

DESCRIPTION ThisadvancedPowerMOSFETsfromInternational Rectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit, combinedwiththefastswitchingspeedandruggedized devicedesignthatHEXFETpowerMOSFETsarewell knownfor,

IRFZ44NS

60V N-Channel MOSFET

GeneralDescription TheIRFZ44NS/IRFZ44Nusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications.

IRFZ44NS

N-channel enhancement mode TrenchMOS? transistor;

GENERAL DESCRIPTION\nN-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.

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IRFZ44NS

60V N-Channel Power MOSFET;

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IRFZ44NS

55V 單個 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封裝; \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關\n? 完全雪崩額定值\n? 175°C 的工作溫度\n;

IRFZ44NS

60V N-Channel MOSFET