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IRFSL4227PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFSL4227PBF規(guī)格書詳情
描述 Description
This HEXFET Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma Display Panels.
特性 Features
● Advanced Process Technology
● Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
● Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
● Low QG for Fast Response
● High Repetitive Peak Current Capability for
Reliable Operation
● Short Fall & Rise Times for Fast Switching
●175°C Operating Junction Temperature for
Improved Ruggedness
● Repetitive Avalanche Capability for Robustness
and Reliability
產(chǎn)品屬性
- 型號:
IRFSL4227PBF
- 功能描述:
MOSFET MOSFT 200V 65A 26mOhm 70nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO262 |
8500 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
IR |
24+ |
NA/ |
10409 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
IR |
TO262 |
29 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | |||
IR |
24+ |
TO-262 |
263 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
24+ |
TO-262 |
278 |
詢價 | |||
Infineon Technologies |
2022+ |
TO-262-3,長引線,I2Pak,TO-26 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
IR |
23+ |
TO-262 |
7000 |
詢價 | |||
Infineon |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 | ||
IR |
23+ |
TO-262 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |