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IRFR3710ZPBF中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書
IRFR3710ZPBF規(guī)格書詳情
描述 Description
This HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
特性 Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Multiple Package Options
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFR3710ZPBF
- 功能描述：
MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR原裝特價 |
TO-252 |
2000 |
原裝長期供貨! |
詢價 | |||
IR |
TO-252 |
125000 |
一級代理原裝正品,價格優(yōu)勢,長期供應(yīng)! |
詢價 | |||
IR |
11+PBF |
TO-252 |
3150 |
普通 |
詢價 | ||
Infineon |
22+ |
NA |
3768 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
原裝IR |
21+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
24+ |
TO-252 |
500942 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
Infineon |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
NK/南科功率 |
2025+ |
TO-252-2 |
986966 |
國產(chǎn) |
詢價 | ||
IR |
24+ |
NA/ |
1495 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 |
