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IRFR2905ZPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFR2905ZPBF規(guī)格書詳情
VDSS = 55V
RDS(on) = 14.5m?
ID = 42A
描述 Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
特性 Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFR2905ZPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO252 |
12800 |
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術 |
詢價 | ||
IR |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
IR |
22+ |
TO-252 |
100707 |
原裝正品現(xiàn)貨,可開13點稅 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-252 |
12080 |
原裝正品 |
詢價 | ||
Infineon |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
IR |
24+ |
TO-252 |
80000 |
只做自己庫存 全新原裝進口正品假一賠百 可開13%增 |
詢價 | ||
IR |
20+ |
DPAK |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
INFINEON/英飛凌 |
2023+ |
TO-252 |
12000 |
專注全新正品,優(yōu)勢現(xiàn)貨供應 |
詢價 | ||
IR |
22+ |
TO-252 |
6300 |
只做原裝,假一罰百,長期供貨。 |
詢價 |
