零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFR024 | HEXFET POWER MOSFET; | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Power MOSFET FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR024,SiHFR024) ?Straightlead(IRFU024,SiHFU024) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體 | EVVOSEMI | ||
Ultra Low On-Resistance Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
The D-PAK is designed for surface mounting using vapor phase, infrared,or wave soldering technigues. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | UMW | ||
MOSFET Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體 | EVVOSEMI | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
技術參數(shù)
- OPN:
IRFR024NTRLPBF/IRFR024NTRPBF
- Qualification:
Non-Automotive
- Package name:
DPAK/DPAK
- VDS max:
55 V
- RDS (on) @10V max:
75 m?/75 m?
- ID @25°C max:
17 A/17 A
- QG typ @10V:
13.3 nC/13.3 nC
- Polarity:
N
- VGS(th) min:
2 V/2 V
- VGS(th) max:
4 V/4 V
- VGS(th):
3 V/3 V
- Technology:
IR MOSFET?/IR MOSFET?
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
23+ |
SOT-252 |
20529 |
專注原裝正品現(xiàn)貨特價中量大可定 |
詢價 | |||
IR |
最新 |
1000 |
原裝正品現(xiàn)貨 |
詢價 | |||
IR |
24+ |
TO-252 |
500862 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
TO-252 |
1000 |
詢價 | |||
IR |
24+/25+ |
2590 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
IR |
2015+ |
TO-252 |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
05+ |
TO-252 |
15000 |
原裝進口 |
詢價 | ||
IR |
12+ |
TO-252 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應。 |
詢價 | ||
IR |
24+ |
原廠封裝 |
3488 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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