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IRFQ110

QUAD N-CHANNEL ENHANCEMENT MOSFETS

SEME-LAB

Seme LAB

IRFR110

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs

4.7A,100V,0.540Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseadvancedpowerMOSFETsaredesignedforuse

Intersil

Intersil Corporation

IRFR110

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR110

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR110

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR110,SiHFR110) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR110A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.289Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR110A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR110ATM

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR110ATM

N-channelEnhancementModePowerMOSFET

Features ?VDS=100V,ID=18.1A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFQ110

  • 制造商：

    SEME-LAB

  • 制造商全稱：

    Seme LAB

  • 功能描述：

    QUAD N-CHANNEL ENHANCEMENT MOSFETS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
長期備有現(xiàn)貨
500000
行業(yè)低價(jià),代理渠道
 詢價(jià)
SML
23+
CLCC
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
SML
23+
CLCC
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
F
25+
TOP220
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
22+
SOT-252
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
SOT-252
7000
詢價(jià)
IR
23+
TO-251/TO-25
9896
詢價(jià)
IR
24+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
更多IRFQ110供應(yīng)商 更新時(shí)間2025-7-27 8:20:00

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