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IRFL9110

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerationpower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9110PBF

HEXFET?PowerMOSFET(VDSS=-100V,RDS(on)=1.2廓,ID=-1.1A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesold

IRF

International Rectifier

IRFL9110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9110TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9110TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL9110TRPBF

P-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

IRFL9110TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9110

PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-3.1A)

DESCRIPTION ThirdGnerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtec

IRF

International Rectifier

IRFR9110

3.1A,100V,1.200Ohm,P-ChannelPowerMOSFETs

TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

Intersil

Intersil Corporation

IRFR9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    IRFF9110

  • 制造商:

    International Rectifier

  • 功能描述:

    TRANS MOSFET P-CH 100V 2.5A 3PIN TO-39 - Bulk

  • 功能描述:

    P CH MOSFET, -100V, 2.5A, TO-205AF; Transistor

  • Polarity:

    P Channel; Continuous Drain Current

  • Id:

    -2.5A; Drain Source Voltage

  • Vds:

    -100V; On Resistance

  • Rds(on):

    1.2ohm; Rds(on) Test Voltage

  • Vgs:

    -10V; Threshold Voltage Vgs

  • Typ:

    -4V ;RoHS

  • Compliant:

    No

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19960
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IR
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9888
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IR
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一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
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IR
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6000
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更多IRFF9110供應(yīng)商 更新時(shí)間2025-7-22 13:30:00