IRF9Z34S中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRF9Z34S規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
FEATURES
? Advanced Process Technology
? Surface Mount (IRF9Z34S/SiHF9Z34S)
? Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)
? 175 °C Operating Temperature
? Fast Switching
? P-Channel
? Fully Avalanche Rated
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號：
IRF9Z34S
- 功能描述：
MOSFET P-Chan 60V 18 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
501341 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IR |
25+23+ |
TO-263 |
27673 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
IR |
22+ |
TO-263 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
25+ |
SOT-263 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
24+ |
TO-263 |
34 |
詢價 | |||
9817 |
145 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | ||||
VISHAY |
24+ |
TO-263 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價 | ||
Vishay Siliconix |
2022+ |
TO-263-3,D2Pak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
IR |
2022+ |
TO-263 |
48000 |
只做原裝,原裝,假一罰十 |
詢價 | ||
IRF |
23+ |
TO-263 |
7000 |
詢價 |
