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SFS9Z34

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SFW9Z34

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SFW9Z34

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175oCOperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=-60V ?LowRDS(ON):0.106?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFWI9Z34

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SIHF9Z34

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

KERSEMI

Kersemi Electronic Co., Ltd.

SIHF9Z34

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z34L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z34S

PowerMOSFET

FEATURES ?Advancedprocesstechnology ?Surfacemount(IRF9Z34S,SiHF9Z34S) ?175°Coperatingtemperature ?Fastswitching ?P-channel ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesin

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z34S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z34STL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF9Z34NPBF

  • 功能描述：

    MOSFET MOSFT PCh -55V -17A 100mOhm 23.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
24+
TO-220
9104
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢價(jià)
IR
2020+
TO-220
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫存 價(jià)格優(yōu)勢
 詢價(jià)
INFINEON/IR
1907+
NA
54350
20年老字號,原裝優(yōu)勢長期供貨
 詢價(jià)
INFINEON/英飛凌
25+
TO220
32360
INFINEON/英飛凌全新特價(jià)IRF9Z34NPBF即刻詢購立享優(yōu)惠#長期有貨
 詢價(jià)
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
 詢價(jià)
23+
TO-220
30000
專注原裝正品現(xiàn)貨特價(jià)中量大可定
 詢價(jià)
IR
16+
TO-220
36000
原裝正品,優(yōu)勢庫存81
 詢價(jià)
IR
23+
TO-220AB
65400
詢價(jià)
IR
2020+
TO-220
32000
原裝正品,誠信經(jīng)營。
 詢價(jià)
更多IRF9Z34NPBF供應(yīng)商 更新時(shí)間2025-7-28 17:08:00

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