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IRF9Z34

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-18A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF9Z34

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF9Z34

Power MOSFET; ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? P-channel\n\n\n\n;

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34L

Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34LPBF

Surface Mount

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34N

Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

技術(shù)參數(shù)

  • OPN：

    IRF9Z34NPBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    -55 V

  • RDS (on) @10V max：

    100 m?

  • ID @25°C max：

    -19 A

  • QG typ @10V：

    23.3 nC

  • Polarity：

    P

  • VGS(th) min：

    -2 V

  • VGS(th) max：

    -4 V

  • VGS(th)：

    -3 V

  • Technology：

    IR MOSFET?

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
25+
TO-220
45000
IR全新現(xiàn)貨IRF9Z34即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
06+
TO-220
3000
自己公司全新庫(kù)存絕對(duì)有貨
 詢價(jià)
IR
23+
TO-220
35890
詢價(jià)
IR
24+
TO-220
500
詢價(jià)
IR
2015+
DIP/SMD
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
 詢價(jià)
IR/FSC
17+
TO-220
6200
詢價(jià)
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
 詢價(jià)
IR
24+
原廠封裝
1000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
24+/25+
300
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
更多IRF9Z34供應(yīng)商 更新時(shí)間2025-7-28 14:14:00

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