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IRF9Z24S中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

IRF9Z24S
廠商型號

IRF9Z24S

功能描述

Power MOSFET

文件大小

207.54 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商

VISHAY Vishay Siliconix

中文名稱

威世科技 威世科技半導(dǎo)體

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-24 23:01:00

人工找貨

IRF9Z24S價格和庫存,歡迎聯(lián)系客服免費人工找貨

IRF9Z24S規(guī)格書詳情

FEATURES

? Advanced process technology

? Surface mount (IRF9Z24S, SiHF9Z24S)

? 175 °C operating temperature

? Fast switching

? P-channel

? Fully avalanche rated

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note?

* This datasheet provides information about parts that are?

RoHS-compliant and / or parts that are non-RoHS-compliant. For?

example, parts with lead (Pb) terminations are not RoHS-compliant.?

Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D2PAK is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D2PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

產(chǎn)品屬性

  • 型號:

    IRF9Z24S

  • 功能描述:

    MOSFET P-Chan 60V 11 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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