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首頁>IRF9Z14S>規(guī)格書詳情

IRF9Z14S中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

IRF9Z14S
廠商型號

IRF9Z14S

功能描述

Power MOSFET

文件大小

2.45358 Mbytes

頁面數(shù)量

8

生產(chǎn)廠商

VISHAY Vishay Siliconix

中文名稱

威世科技 威世科技半導(dǎo)體

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-21 23:01:00

人工找貨

IRF9Z14S價格和庫存,歡迎聯(lián)系客服免費人工找貨

IRF9Z14S規(guī)格書詳情

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of is low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

The through-hole version (IRF9Z14L/SiHF9Z14L) is available for low-profile applications.

FEATURES

? Advanced Process Technology

? Surface Mount (IRF9Z14S/SiHF9Z14S)

? Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L)

? 175 °C Operating Temperature

? Fast Switching

? P-Channel

? Fully Avalanche Rated

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號:

    IRF9Z14S

  • 功能描述:

    MOSFET P-Chan 60V 6.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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