首頁>IRF9952PBF>規(guī)格書詳情
IRF9952PBF中文資料IRF數據手冊PDF規(guī)格書
IRF9952PBF規(guī)格書詳情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
● Generation V Technology
● Ultra Low On-Resistance
● Dual N and P Channel MOSFET
● Surface Mount
● Very Low Gate Charge and Switching Losses
● Fully Avalanche Rated
● Lead-Free
產品屬性
- 型號：
IRF9952PBF
- 功能描述：
MOSFET 30V DUAL N/P CH 20V VGS MAX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
8-SOIC |
21255 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
22+23+ |
SOP8 |
8000 |
新到現貨，只做原裝進口 |
詢價 | ||
IR |
24+ |
65230 |
詢價 | ||||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
英飛凌 |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
IR |
24+ |
NA/ |
21185 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
16+ |
8-SOIC |
21144 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IOR |
1738+ |
SOP-8 |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
IR |
24+ |
8-SOIC |
21144 |
只做原廠渠道 可追溯貨源 |
詢價 |
