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IRF9630

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutparts

VishayVishay Siliconix

威世科技威世科技半導體

IRF9630

Power MOSFETS

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?P-Channel ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof

VishayVishay Siliconix

威世科技威世科技半導體

IRF9630

6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

Features ?6.5A,200V ?r DS(ON) =0.800 Ω ?SinglePulseAvalancheEnergyRated ?SOAisPowerDissipationLimited ?NanosecondSwitchingSpeeds ?LinearTransferCharacteristics ?HighInputImpedance ?RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMount Componentsto

SYC

SYC Electronica

IRF9630

6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF9630

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導體

IRF9630

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRF9630

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9630

SEMICONDUCTORS

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etc未分類制造商etc2未分類制造商

IRF9630

6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs;

RenesasRenesas Technology Corp

瑞薩瑞薩科技有限公司

IRF9630

Power MOSFET; ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? P-channel\n\n\n\n;

VishayVishay Siliconix

威世科技威世科技半導體

技術(shù)參數(shù)

  • 漏源電壓（Vdss）：

    200V

  • 柵源極閾值電壓（最大值）：

    4V @ 250uA

  • 漏源導通電阻（最大值）：

    800 mΩ @ 3.9A，10V

  • 類型：

    P 溝道

  • 功率耗散（最大值）：

    74W

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON/英飛凌
25+
TO-220
45000
INFINEON/英飛凌全新現(xiàn)貨IRF9630即刻詢購立享優(yōu)惠#長期有排單訂
 詢價
IR
24+
TO-220
100
只做原廠渠道 可追溯貨源
 詢價
IR
24+
TO 220
161181
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
24+/25+
79
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
IOR
07PB
TO220/
2360
全新原裝進口自己庫存優(yōu)勢
 詢價
IR
06+
TO-220
8000
自己公司全新庫存絕對有貨
 詢價
IR/FSC
17+
TO-220
6200
詢價
IR
24+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO-220
9896
詢價
更多IRF9630供應(yīng)商 更新時間2025-7-28 20:12:00

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