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IRF9530NSPBF

Advanced Process Technology Surface Mount

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

Advanced Process Technology

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRF9530NSPBF

HEXFET? Power MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF9530NSPBF_15

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRF9530NSTRLPBF

AdvancedProcessTechnology

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSTRLPbF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF9530NSTRR

PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A)

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSTRRPBF

AdvancedProcessTechnology

VDSS=-100V RDS(on)=0.20? ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530PBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    IRF9530NSPBF

  • 功能描述:

    MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-263
65400
詢價
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
IR
20+
TO-263
10000
詢價
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
183
全新原裝 貨期兩周
詢價
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IR
24+
TO-263
90000
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理
詢價
IR
24+
TO-263
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
更多IRF9530NSPBF供應(yīng)商 更新時間2025-7-15 16:39:00