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首頁(yè)>IRF9530>規(guī)格書詳情

IRF9530中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF9530
廠商型號(hào)

IRF9530

功能描述

Power MOSFET

文件大小

158.27 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

VISHAY威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-7-15 22:58:00

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IRF9530規(guī)格書詳情

FEATURES

? Dynamic dV/dt rating

? Repetitive avalanche rated

? P-channel

? 175 °C operating temperature

? Fast switching

? Ease of paralleling

? Simple drive requirements

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

產(chǎn)品屬性

  • 型號(hào):

    IRF9530

  • 功能描述:

    MOSFET -100V Single P-Channel HEXFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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