IRF9150中文資料新澤西半導體數(shù)據(jù)手冊PDF規(guī)格書
IRF9150規(guī)格書詳情
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
? -25A, -100V
? rDS(ON) = 0.150?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
產(chǎn)品屬性
- 型號：
IRF9150
- 制造商：
Microsemi Corporation
- 功能描述：
TRANS MOSFET P-CH 100V 25A 3PIN TO-3 - Bulk
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
21+ |
TO-3 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | |||
IR |
23+ |
TO-3 |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
25+ |
TO-3 |
2500 |
自家優(yōu)勢產(chǎn)品,歡迎來電咨詢! |
詢價 | ||
IR/VISHAY |
23+ |
TO-220AB |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
24+ |
TO-3 |
55 |
詢價 | |||
IR |
22+ |
TO220 |
17800 |
原裝正品 |
詢價 | ||
IR |
23+24 |
TO-3 |
9860 |
原廠原包裝。終端BOM表可配單?？砷_13%增值稅 |
詢價 | ||
IR/MOT |
專業(yè)鐵帽 |
TO-3 |
120 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
IR |
22+ |
TO-3 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
