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IRFI840GLC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GLCPBF

HEXFETPowerMOSFET

DESCRIPTION ThisnewseriesofLowChargeHEXFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHEXFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Thesedeviceim

IRF

International Rectifier

IRFI840GLCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GPBF

HEXFET?PowerMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRFI840GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s,f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI840GPBF

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFI840GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS840

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

技術(shù)參數(shù)

  • 漏源電壓（Vdss）：

    500V

  • 柵源極閾值電壓（最大值）：

    4V @ 250uA

  • 漏源導(dǎo)通電阻（最大值）：

    850 mΩ @ 4.8A，10V

  • 類型：

    N 溝道

  • 功率耗散（最大值）：

    125W

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
10+11+
TO220
211913
原裝正品現(xiàn)貨 特價支持實(shí)單
 詢價
VISHAY
24+
TO-220
44787
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢價
VISHAY
2020+
TO-220
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
VISHAY/威世
18+
TO-220
5
只做原裝,可開13個點(diǎn)稅票
 詢價
INFINEON/英飛凌
25+
TO-220
45000
IR/FSC/VISHAY全新現(xiàn)貨IRF840PBF即刻詢購立享優(yōu)惠#長期有排單訂
 詢價
VISHAY
24+
TO-220
15000
全新原裝的現(xiàn)貨
 詢價
VISHAY/ON原裝正品價格
23+
TO-220
20178
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
VISHAY
17+
TO-220
6200
100%原裝正品現(xiàn)貨
 詢價
VISHAY
23+
TO-220
20000
原裝正品,假一罰十
 詢價
更多IRF840P供應(yīng)商 更新時間2025-7-29 15:01:00

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