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IRF840LCS

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCS

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCS

PowerMOSFET

FEATURES ?Ultralowgatecharge ?Reducedgatedriverequirement ?Enhanced30VVGSrating ?ReducedCiss,Coss,Crss ?Extremelyhighfrequencyoperation ?Repetitiveavalancherated ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCSPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCSPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCSTRR

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCSTRRPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCSTRRPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840PBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF840PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

技術(shù)參數(shù)

  • Peak Inverse Voltage PIV (V)：

    500

  • Peak Fwd. Surge Current @ 8.3ms Superimposed Ifsm (A)：

    ?

  • Package：

    ?

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
TO-220
22+
6000
十年配單,只做原裝
 詢價(jià)
IR
23+
TO-220
6000
原裝正品，支持實(shí)單
 詢價(jià)
IR
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-220
7000
詢價(jià)
Vishay
NEW-
MOSFETs
100000
IRF840HPBF
 詢價(jià)
APEC
2016+
TO-220F
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
APEC
21+
TO-220F
12588
原裝正品,自己庫(kù)存 假一罰十
 詢價(jià)
APEC/富鼎
23+
TO-220F
24190
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
A-POWER
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
更多IRF840FP供應(yīng)商 更新時(shí)間2025-7-29 14:02:00

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