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IRF840FI

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF840FP

POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTAC

Suntac Electronic Corp.

IRF840LC

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCL

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCL

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCL

Power MOSFET

FEATURES ?Ultralowgatecharge ?Reducedgatedriverequirement ?Enhanced30VVGSrating ?ReducedCiss,Coss,Crss ?Extremelyhighfrequencyoperation ?Repetitiveavalancherated ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCL

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description ThisnewseriesoflowchargeHEXFET?powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem

IRF

International Rectifier

IRF840LCLPBF

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCPBF

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840LCS

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

技術(shù)參數(shù)

  • Ptot(W)：

    32

  • ID(A)：

    8

  • BVDSS(V)：

    500

  • Package：

    TO-220

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IR
新
進(jìn)口原裝
3000
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IR
TO-220
5800
專業(yè)分銷全系列產(chǎn)品!絕對(duì)原裝正品!量大可訂!價(jià)格優(yōu)
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IR/國(guó)際整流器
23+
NA
7825
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IR
25+
TO-220
20300
IR原裝特價(jià)IRF840即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
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IR
24+
TO220
5000
只做原裝正品!現(xiàn)貨庫(kù)存!公司可開(kāi)16點(diǎn)增值稅發(fā)票!
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IR
24+
TO-220
2000
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ST
24+
TO-220
4000
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IR 墨西哥
02+
TO-220
1120
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IR(國(guó)際整流器)
2023+
N/A
4550
全新原裝正品
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IR
24+
TO-220
66800
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更多IRF840供應(yīng)商 更新時(shí)間2025-7-30 9:50:00

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