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IRF830B

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830BPBF

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830F

4.4A,500V,1.5廓N-CHANNELPOWERMOSFET

DESCRIPTION ?IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecove

FS

First Silicon Co., Ltd

IRF830FI

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=3.0A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) ?FastSwitchingSpeed ?SimpleDriveRequirements APPLICATIONS ?Desingedforhighefficiencyswitchmodepowersupply.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF830FP

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

SUNTAC

Suntac Electronic Corp.

IRF830FP

4.5A500VNCHANNELPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF830I-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220CFMisolationpackageiswidelypreferredforcommercialindustrialthroughholeapplications. ▼EaseofParalleling ▼FastSwitchingChar

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

IRF830L

PowerMOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830PBF

HEXFETPowerMOSFET

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    IRF830ASPBF

  • 功能描述:

    MOSFET N-Chan 500V 5.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2016+
TO-263
6528
房間原裝進口現(xiàn)貨假一賠十
詢價
Vishay
24+
NA
3601
進口原裝正品優(yōu)勢供應(yīng)
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
23+
TO-263
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
vishay
23+
NA
4286
專做原裝正品,假一罰百!
詢價
IR
25+23+
TO-263
28216
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
VI1
2447
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
VISHAY
1809+
TO-263
3675
就找我吧!--邀您體驗愉快問購元件!
詢價
IR
1923+
TO-263
6896
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
詢價
VB
21+
D2PAK
10000
原裝現(xiàn)貨假一罰十
詢價
更多IRF830ASPBF供應(yīng)商 更新時間2025-7-26 16:19:00