描述 Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications.

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.

? N-Channel Application-Specific MOSFETs

? Ideal for CPU Core DC-DC Converters

? Low Conduction Losses

? Low Switching Losses

? Minimizes Parallel MOSFETs for high current applications

? 100 RG Tested