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IRF7805QPBF

HEXFET? Power MOSFET;

IRF7805QPBF

HEXFET? Power MOSFET

IRF7805QPBF_08

Advanced Process TechnologyUltra Low On-Resistance

IRF7805QTRPBF

MOSFET N-CH 30V 13A 8-SOIC;

IRF7805TRPBF

NChannelApplicationSpecificMOSFETs

Description ThesenewdevicesemployadvancedHEXFETPowerMOSFETtechnologytoachieveanunprecedentedbalanceofon-resistanceandgatecharge.ThereducedconductionandswitchinglossesmakethemidealforhighefficiencyDC-DCConvertersthatpowerthelatestgenerationofmobilemicroproce

IRF7805TRPBF

N-ChannelEnhancementModePowerMOSFET

Features ?VDS=20V,ID=10A RDS(ON)

IRF7805Z

HEXFETPowerMOSFET

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent ●100TestedforRG Applications ●HighFrequencyPoint-of-LoadSynchronousBuckConverterforApplicationsinNetworking&ComputingSystems.

IRF7805Z

N-ChannelEnhancementMOSFET

■Features ●VDS(V)=30V ●ID=16A(VGS=10V) ●RDS(ON)

IRF7805ZGPBF

HEXFET

PowerMOSFET

IRF7805ZGTRPBF

HighFrequencyPoint-of-LoadSynchronousBuckConverterforApplicationsinNetworking&ComputingSystems