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IRF7507PBF規(guī)格書詳情
N-Ch P-Ch
VDSS 20V -20V
RDS(on) 0.135? 0.27?
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead Free
產(chǎn)品屬性
- 型號：
IRF7507PBF
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
N/A |
24+ |
MSOP8 |
80000 |
只做自己庫存 全新原裝進口正品假一賠百 可開13%增 |
詢價 | ||
IR |
22+ |
MSOP-8 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
25+ |
TSSOP |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
24+ |
MSOP8 |
1202 |
詢價 | |||
IRF7507TR |
667 |
667 |
詢價 | ||||
IR |
17+ |
MSOP-8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
24+ |
QFN10 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
IR |
2447 |
MSOP8 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
Infineon Technologies |
2022+ |
Micro8? |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
