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IRFI740G

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.4A)

Description ThirdGnerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapp

IRF

International Rectifier

IRFI740G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s;f=60Hz) ?SinktoLeadCr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740G

PowerMOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thir

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740GLC

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=5.7A)

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

IRF

International Rectifier

IRFI740GLC

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740GLC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740GLCPBF

HEXFET?PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

IRF

International Rectifier

IRFI740GLCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740GLCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI740GPBF

HEXFETPowerMOSFET

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF740B

  • 功能描述：

    MOSFET 400V N-Channel B-FET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
onsemi(安森美)
24+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢(xún)價(jià)
IR
05+
原廠原裝
1000
全新原裝 絕對(duì)有貨
 詢(xún)價(jià)
FSC
17+
TO-220
6200
詢(xún)價(jià)
Fairchi
24+
TO220
6000
進(jìn)口原裝正品假一賠十,貨期7-10天
 詢(xún)價(jià)
IR
23+
SOP-8
8238
詢(xún)價(jià)
FA
24+
TO-220
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢(xún)價(jià)
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
 詢(xún)價(jià)
FAIRCHILD
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢(xún)價(jià)
FSC
2020+
TO-220
4000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢(xún)價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
更多IRF740B供應(yīng)商 更新時(shí)間2025-7-27 10:22:00

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