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IRF730S

HEXFET POWER MOSFET

DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp

IRF

International Rectifier

IRF730S

N-Channel MOSFET

■Features ●VDS(V)=400V ●ID=5.5A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

IRF730S

Repetitive Avalanche Rated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導體

IRF730S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet

VishayVishay Siliconix

威世科技威世科技半導體

IRF730S

Power MOSFET; Surface-mount\nAvailable in tape and reel\nDynamic dV/dt rating;

VishayVishay Siliconix

威世科技威世科技半導體

IRF730S

HEXFET POWER MOSFET;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF730S_V01

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet

VishayVishay Siliconix

威世科技威世科技半導體

IRF730SPBF

HEXFET POWER MOSFET

DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp

IRF

International Rectifier

IRF730S/SiHF730S

Power MOSFET;

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRF730S

  • 功能描述：

    MOSFET N-Chan 400V 5.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-263
35890
詢價
IR
1415+
TO-263
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
IR
05+
TO-263
15000
自己公司全新庫存絕對有貨
 詢價
IR
24+
原廠封裝
1438
原裝現(xiàn)貨假一罰十
 詢價
IR
24+
D2-Pak
8866
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
VISHAY
21+
TO-263
12588
原裝正品,自己庫存 假一罰十
 詢價
IR
1950+
TO-263
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
IR/VISHAY
20+
D2-PAK
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
更多IRF730S供應商 更新時間2025-7-28 16:17:00

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