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IRFS730A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=400V ■LowerRDS(ON):0.765Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFS730A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFS730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

KERSEMI

Kersemi Electronic Co., Ltd.

IRFW730

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFW730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

ISCB730N

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISCB730P

iscSiliconPNPPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISCD730N

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISCD730P

iscSiliconPNPPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

技術參數(shù)

  • Peak Inverse Voltage PIV (V)：

    400

  • Peak Fwd. Surge Current @ 8.3ms Superimposed Ifsm (A)：

    ?

  • Package：

    ?

供應商型號品牌批號封裝庫存備注價格
IR
15+
TO-220F
28
只做原裝正品
 詢價
IR
24+
TO-220F
43200
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
22+
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
7000
詢價
IR
05+
原廠原裝
651
只做全新原裝真實現(xiàn)貨供應
 詢價
VishayIR
24+
TO-262
340
詢價
VISHAY
1503+
TO-262
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
25+
262
8880
原裝認準芯澤盛世！
 詢價
更多IRF730FP供應商 更新時間2025-7-29 14:06:00

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