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IRF730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

KERSEMI

Kersemi Electronic Co., Ltd.

IRF730B

N-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=5.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF730B

DSeriesPowerMOSFET

FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit(

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF730F

6.0A,400V,1.0廓N-CHANNELPOWERMOSFET

DESCRIPTION ?IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecov

FS

First Silicon Co., Ltd

IRF730FI

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=3.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersu

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF730FP

6.0A400VNCHANNELPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF730PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF730PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF730PBF

6.5A,400VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF730PBF

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF730ASPBF

  • 功能描述：

    MOSFET N-Chan 400V 5.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
25+23+
TO-263
28849
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
IR
23+
TO-263
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
IR/VISH
24+
65230
詢價
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VI1
2447
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
VISHAY
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
1923+
TO-263
6896
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
IR
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VB
21+
D2PAK
10000
原裝現(xiàn)貨假一罰十
 詢價
更多IRF730ASPBF供應(yīng)商 更新時間2025-7-29 13:52:00

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