描述 Description

The IRF6631 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.

? RoHS compliant containing no lead or bromide

? Low Profile (<0.6 mm)

? Dual Sided Cooling Compatible

? Ultra Low Package Inductance

? Optimized for High Frequency Switching

? Ideal for CPU Core DC-DC Converters

? Optimized for Control FET applications

? Low Conduction and Switching Losses

? Compatible with existing Surface Mount Techniques