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IRF646

14A, 275V, 0.280 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthereakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchingr

Intersil

Intersil Corporation

IRF646

isc N-Channel Mosfet Transistor

·FEATURES ·AvalancheRuggedTechnology ·RuggedGateOxideTechnology ·LowerInputCapacitance ·ImprovedGateCharge ·ExtendedSafeOperatingArea ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·Designedespeciallyforhighvoltage,highsp

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF646

14A, 275V, 0.280 Ohm, N-Channel Power MOSFET; ? 14A, 275V\n? rDS(ON)= 0.280?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? 275VDC Rating-120VAC Line System Operation\n? Related Literature\n- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the reakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

RenesasRenesas Technology Corp

瑞薩瑞薩科技有限公司

IRF646

Trans MOSFET N-CH 275V 14A 3-Pin(3+Tab) TO-220AB;

NJS

New Jersey Semiconductor

KRC646T

EPITAXIALPLANARNPNTRANSISTOR(HIGHCURRENTSWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

HIGHCURRENTSWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighOutputCurrent:800mA.

KECKEC CORPORATION

KEC株式會(huì)社

LD646A

16-BITBUSTRANSCEIVERANDREGISTERWITH3-STATEOUTPUTS

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LDH646A

16-BITBUSTRANSCEIVERANDREGISTER

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

LDH646A

16-BITBUSTRANSCEIVERANDREGISTERWITH3-STATEOUTPUTS

TITexas Instruments

德州儀器美國(guó)德州儀器公司

MCRO646

VoltageControlledOscillatorwithceramiccoaxialresonator

BOWEIBOWEI Integrated Circuits CO.,LTD.

博威集成電路河北博威集成電路有限公司

MRF646

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASIMRF646isdesignedfor12.5UHFlargesignalapplicationsupto512MHz. FEATURES: ?InternalInputMatchingNetwork ?PG=4.8dBat45W/470MHz ?Omnigold?MetalizationSystem ?CommonEmitter,12.5Voperation

ASI

Advanced Semiconductor

技術(shù)參數(shù)

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    125000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    275V

  • Maximum Continuous Drain Current:

    14A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

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HAR
24+
TO-220
30000
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HARRIS
23+
SOP8
5000
原裝正品,假一罰十
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HAR
23+
TOP-3P
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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NEXPERIA/安世
23+
SOT78
69820
終端可以免費(fèi)供樣,支持BOM配單!
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FAIRCHILD/仙童
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
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INTERSIL
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
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FAIRCHILD/仙童
23+
TO-TO-220
12300
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FAIRCHILD/仙童
23+
TO-220
6000
原裝正品,支持實(shí)單
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HAR
99+
TO-220
247
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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HAR
23+
1172
66569
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更多IRF646供應(yīng)商 更新時(shí)間2025-7-27 16:30:00