IRF630中文資料尼爾半導體數(shù)據(jù)手冊PDF規(guī)格書
IRF630規(guī)格書詳情
DESCRIPTION
The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated circuits.
FEATURES
● RDS(ON) = 0.40? @ VGS = 10V
● Ultra low gate charge(43nC max.)
● Low reverse transfer capacitance
(CRSS = 80pF typical)
● Fast switching capability
● 100 avalanche energy specified
● Improved dv/dt capability
● 150°C operation temperature
產(chǎn)品屬性
- 型號：
IRF630
- 功能描述：
MOSFET N-Ch 200 Volt 10 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO220 |
32360 |
ST/意法全新特價IRF630即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
ST/意法 |
24+ |
NA/ |
50 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ST(意法半導體) |
24+ |
TO220 |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
HARRIS |
2016+ |
TO-220 |
3500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ON |
23+ |
DIP-16 |
6500 |
全新原裝假一賠十 |
詢價 | ||
ST/意法 |
25+ |
TO220 |
54648 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
詢價 | ||
IR |
2023+ |
TO-220 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
IR |
22+ |
TO-220 |
8900 |
全新正品現(xiàn)貨 有掛就有現(xiàn)貨 |
詢價 | ||
IR |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | |||
IR |
24+ |
TO 220 |
161449 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 |
