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IRF540N

33A,100V,0.040Ohm,N-Channel,PowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.040Ω,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER ElectricalModels -SpiceandSABER ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF540N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF540NL

PowerMOSFET(Vdss=100V,Rds(on)=44mohm,Id=33A)

AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

IRF

International Rectifier

IRF540NL

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF540NL

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540NL

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-262package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF540NLPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF540NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF540NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF540NPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

技術(shù)參數(shù)

  • PC：

    2.0

  • ID：

    27

  • VDSS：

    100

  • Vth(min)：

    2

  • RDS：

    80

  • VGS(RDS)：

    10

  • Package：

    TO-220F

供應(yīng)商型號品牌批號封裝庫存備注價格
Harris
290
公司優(yōu)勢庫存 熱賣中!!
 詢價
IR
22+
TO-263
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-263
7000
詢價
ST
24+
TO-220F
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
IR
23+
TO-220F
5500
現(xiàn)貨,全新原裝
 詢價
VBSEMI/臺灣微碧
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO220F
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
1922+
TO-220F
517
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ST
TO-220F
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
更多IRF540F供應(yīng)商 更新時間2025-7-27 16:20:00

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