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IRF520

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

APPLICATIONS nHIGHCURRENT,HIGHSPEEDSWITCHING nSOLENOIDANDRELAYDRIVERS nREGULATORS nDC-DC&DC-ACCONVERTERS nMOTORCONTROL,AUDIOAMPLIFIERS nAUTOMOTIVEENVIRONMENT(INJECTION, ABS,AIR-BAG,LAMPDRIVERS,Etc.)

SYC

SYC Electronica

IRF520

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF520

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF520

N-Channel Power Mosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF520_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導體

IRF520A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF520FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF520FI

isc N-Channel MOSFET Transistor

?DESCRITION ?HighCurrent,HighSpeedSwitching ?DC-DC&DC-ACConverters ?MotorControl,AudioAmplifiers ?FEATURES ?TypicalRDS(on)=0.23Ω ?AvalancheRuggedTechnology ?HighCurrentCapability ?LowGateCharge ?175℃OperatingTemperature

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF520L

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF520N

Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRF520

  • 功能描述：

    MOSFET N-Chan 100V 9.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-220
2000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
IR
24+
TO 220
161301
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
06+
TO-220
8000
原裝庫存
 詢價
IR
23+
TO-220
19526
詢價
IR
24+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
 詢價
24+/25+
33
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應
 詢價
IOR
24+
TO220
200
詢價
mot
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
更多IRF520供應商 更新時間2025-7-22 16:29:00

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