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IRF510

N-Channel Power MOSFETs, 5.5 A, 60-100V

N-ChannelPowerMOSFETs,5.5A,60-100V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF510

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

HEXFETpowerMOSFET.VDSS=100V,RDS(on)=0.54Ohm,ID=5.6A

IRF

International Rectifier

IRF510

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

HARRIS

Harris Corporation

IRF510

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF510

N-Channel Enhancement-Mode Vertical DMOS Power FETs

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

SUTEX

Supertex, Inc

IRF510

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

5.6A,100V,0.540Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

Intersil

Intersil Corporation

IRF510

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF510

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

Features ?5.6A,100V ?r DS(ON) =0.540 Ω ?SinglePulseAvalancheEnergyRated ?SOAisPowerDissipationLimited ?NanosecondSwitchingSpeeds ?LinearTransferCharacteristics ?HighInputImpedance ?RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMount Componentsto

SYC

SYC Electronica

IRF510

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A;

HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A\n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF510

N-Channel Power MOSFETs, 5.5 A, 60-100V;

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF510

  • 功能描述：

    MOSFET N-Chan 100V 5.6 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
TO-220
2000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價(jià)
INTERSIL
23+
TO-220
29600
一級(jí)分銷商!
 詢價(jià)
SEC
2021+
TO-220AB
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
IR
24+
TO 220
161277
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
05+
TO-220
8000
原裝進(jìn)口
 詢價(jià)
IR
24+
TO-220
6
詢價(jià)
IR
24+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
23+
TO-220
9526
詢價(jià)
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長(zhǎng)期供應(yīng)
 詢價(jià)
更多IRF510供應(yīng)商 更新時(shí)間2025-7-28 16:26:00

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