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IRF440

N-CHANNEL POWER MOSFETS

FEATURES ?LowBoston)athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolyslllcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highvol

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF440

N-Channel Power MOSFETs, 8A, 450 V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF440

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

8A,500V,0.850Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsare

Intersil

Intersil Corporation

IRF440

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF440

N-CHANNEL POWER MOSFETS

FEATURES ?LowBoston)athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolyslllcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highvol

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF440

N-Channel Power MOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ●VGSRatedat±20V ●SiliconGateforFastSwitchingSpe

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF440

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET / TO-220AB Package;

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

IRF440

N-CHANNEL POWER MOSFETS;

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF440

HiRel MOSFETs; \n優(yōu)勢(shì):\n;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF440

Repetitive Avalanche Ratings

IRF

International Rectifier

技術(shù)參數(shù)

  • Minimum Operating Temperature：

    -55°C

  • Maximum Power Dissipation：

    125000mW

  • Maximum Operating Temperature：

    150°C

  • Maximum Gate Source Voltage：

    ±20V

  • Maximum Drain Source Voltage：

    500V

  • Maximum Continuous Drain Current：

    8A

  • Configuration：

    Single

  • Channel Type：

    N

  • Channel Mode：

    Enhancement

  • Category：

    Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
66800
原廠授權(quán)一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力！
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
25+
原廠封裝
10280
原廠授權(quán)一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力!
 詢價(jià)
IR
24+
TO-3
10000
詢價(jià)
IR
2015+
TO-3(鐵帽)
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IR
23+
TO-3
5000
原裝正品,假一罰十
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IR
2016+
TO204AA
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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mospec
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
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FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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UNMARKED
新
25
全新原裝 貨期兩周
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更多IRF440供應(yīng)商 更新時(shí)間2025-7-30 9:28:00

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