零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF300 | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | |
SMPS MOSFET Applications HighfrequencyDC-DCconverters Benefits LowGatetoDrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Applications HighfrequencyDC-DCconverters Lead-Free Benefits LowGatetoDrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisdesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature, | IRF International Rectifier | IRF | ||
75V 單個 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝 \n優(yōu)勢:\n? 符合 RoHS\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n; | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFET Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisdesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature, | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisdesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature, | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisdesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature, | IRF International Rectifier | IRF | ||
75V 單個 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封裝 \n優(yōu)勢:\n? 符合 RoHS\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n; | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFET Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisdesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature, | IRF International Rectifier | IRF |
技術(shù)參數(shù)
- Package?:
TO-220
- VDS?max:
75.0V
- RDS (on)?max:
12.6m?
- RDS (on)(@10V)?max:
12.6m?
- Polarity?:
N
- ID ?max:
56.0A
- ID (@ TC=100°C)?max:
56.0A
- ID (@ TC=25°C)?max:
80.0A
- Ptot?max:
200.0W
- QG?:
89.0nC?
- Mounting?:
THT
- Qgd?:
30.0nC?
- RthJC?max:
0.74K/W
- Tj?max:
175.0°C
- VGS?max:
20.0V
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
SSOP-8 |
8238 |
詢價(jià) | |||
IR |
22+ |
SSOP8 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
SSOP8 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SSOP8 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SSOP8 |
7000 |
詢價(jià) | |||
IR |
24+/25+ |
13800 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
IR |
05+ |
原廠原裝 |
1851 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
13+ |
TO-220 |
26258 |
原裝分銷 |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
1106 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價(jià) |
相關(guān)規(guī)格書
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- PI7C8150B
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