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IRF2807ZL

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807ZL

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRF2807ZLPBF

AUTOMOTIVEMOSFET(75V,94mOHM,75A)

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRF

International Rectifier

IRF2807ZLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807ZPBF

AUTOMOTIVEMOSFET(75V,94mOHM,75A)

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRF

International Rectifier

IRF2807ZS

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807ZS

AUTOMOTIVEMOSFETAdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807ZS

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF2807SPBF

  • 功能描述：

    MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
15+
原廠原裝
4500
進(jìn)口原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
DISCRETE
50
IR
4500
詢(xún)價(jià)
IR
23+
TO-263
9896
詢(xún)價(jià)
IR
24+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
IR
TO-263
5000
原裝長(zhǎng)期供貨!
 詢(xún)價(jià)
IR
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
 詢(xún)價(jià)
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
IR
23+
D2PAK
10050
全新原裝假一賠十
 詢(xún)價(jià)
IR
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢(xún)價(jià)
更多IRF2807SPBF供應(yīng)商 更新時(shí)間2025-7-27 8:48:00

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