零件型號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF2204 | AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRF International Rectifier | IRF | |
IRF2204 | N-Channel MOSFET Transistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3.6m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
IRF2204 | 40V 單個(gè) N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝; \n優(yōu)勢(shì):\n? 符合 RoHS\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動(dòng)態(tài)的dv/dt額定值\n? 快速開(kāi)關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n; | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturestothisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandim | IRF International Rectifier | IRF | ||
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A ) Description ThisHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeatures | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturestothisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandim | IRF International Rectifier | IRF | ||
Package:TO-263;isc N-Channel MOSFET Transistor ?FEATURES ?WithTO-263(D2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchinga | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A ) Description ThisHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeatures | IRF International Rectifier | IRF | ||
HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mΩ , ID = 170A ); | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Advanced Process Technology | IRF International Rectifier | IRF |
技術(shù)參數(shù)
- OPN:
IRF2204PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
40 V
- RDS (on) @10V max:
3.6 m?
- ID @25°C max:
210 A
- QG typ @10V:
130 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET?
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng) |
詢價(jià) | ||
IR |
23+ |
TO-220 |
35890 |
詢價(jià) | |||
IR |
24+ |
TO-220AB |
8866 |
詢價(jià) | |||
IR |
24+ |
原廠封裝 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
2020+ |
TO-220 |
6000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
IR |
1738+ |
TO-220 |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
5000 |
專做原裝正品,假一罰百! |
詢價(jià) |
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