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IRF1407

Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1407

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1407

Advanced Process Technology

IRF

International Rectifier

IRF1407

75V 單個(gè) N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝; \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動(dòng)態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n?\n ?\n;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1407L

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407LPBF

HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407LPbF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1407PBF

HEXFET? Power MOSFET

Description ThisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

IRF

International Rectifier

IRF1407S

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1407SPBF

HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

技術(shù)參數(shù)

  • OPN：

    IRF1407PBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    75 V

  • RDS (on) @10V max：

    7.8 m?

  • ID @25°C max：

    130 A

  • QG typ @10V：

    160 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V

  • VGS(th) max：

    4 V

  • VGS(th)：

    3 V

  • Technology：

    IR MOSFET?

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
13+
TO-220/TO-263
10000
深圳市勤思達(dá)科技有限公司主營IR系列全新原裝正品,現(xiàn)貨供應(yīng)IRF1407,歡迎咨詢洽談。
 詢價(jià)
IR
25+
TO220
12000
原廠代理渠道進(jìn)口原裝現(xiàn)貨QQ：505546343 電話：17621633780
 詢價(jià)
INFINEON/英飛凌
23+
TO-220
15000
原裝現(xiàn)貨假一賠十
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
24+
TO-220-3
8866
詢價(jià)
IR
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價(jià)
IR
24+
TO220
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
2020+
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
IR
1738+
TO-220
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
更多IRF1407供應(yīng)商 更新時(shí)間2025-7-28 11:04:00

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