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IRF1405L

Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A??

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405L

AUTOMOTIVE MOSFET

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1405LPBF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405PBF

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=5.3m? ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS

IRF

International Rectifier

IRF1405PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1405S

PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A??

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF1405S

AUTOMOTIVEMOSFET

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1405S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1405SLPBF

AdvancedProcessTechnology

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF1405SPBF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A)

Description StripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF1405L

  • 制造商：

    International Rectifier

  • 功能描述：

    N CHANNEL MOSFET, 55V, 131A, TO-262, Transistor

  • Polarity：

    N Channel, Continuous D

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
TO-262
9896
詢(xún)價(jià)
IR
24+
TO-262
8866
詢(xún)價(jià)
IR
2015+
TO-262
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
 詢(xún)價(jià)
IR
23+
TO-220
3000
全新原裝
 詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
IR
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢(xún)價(jià)
IR
23+
TO-262
35000
專(zhuān)做原裝正品,假一罰百!
 詢(xún)價(jià)
IR
18+
TO-262
41200
原裝正品,現(xiàn)貨特價(jià)
 詢(xún)價(jià)
RENESAS/瑞薩
23+
SOP-4
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢(xún)價(jià)
IR
23+
TO-262
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢(xún)價(jià)
更多IRF1405L供應(yīng)商 更新時(shí)間2025-7-19 14:01:00

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