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IRF132

N-CHANNEL POWER MOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF132

N-Channel Power MOSFETs, 20 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF132

High Power,High Speed Applications

DESCRIPTION ?DrainCurrentID=12A@TC=25℃ ?DrainSourceVoltage-:VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.25Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF132

N-CHANNEL POWER MOSFETS;

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

IRF1324

N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.5m? ?Enhancementmode: ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1324LPBF

HEXFET Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

IRF1324PBF

HEXFETPower MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowe

IRF

International Rectifier

IRF1324S-7PPBF

HEXFET Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

IRF1324S-7PPBF

High Efficiency Synchronous Rectification in SMPS

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1324SPBF

HEXFET Power MOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability ?Lead-Free Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPow

IRF

International Rectifier

技術(shù)參數(shù)

  • OPN：

    IRF1324PBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    24 V

  • RDS (on) @10V max：

    1.5 m?

  • ID @25°C max：

    353 A

  • QG typ @10V：

    160 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V

  • VGS(th) max：

    4 V

  • VGS(th)：

    3 V

  • Technology：

    IR MOSFET?

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-3
10000
詢價(jià)
INR
23+
TO-3
5000
原裝正品,假一罰十
 詢價(jià)
IR
2015+
TO-3(鐵帽)
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR/MOT
專業(yè)鐵帽
TO-3
1500
原裝鐵帽專營(yíng),代理渠道量大可訂貨
 詢價(jià)
IR
23+
65480
詢價(jià)
IR/MOT
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營(yíng)-可開原型號(hào)增稅票
 詢價(jià)
IRF132
600
600
詢價(jià)
IR
22+
TO-3
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-3
48505
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
更多IRF132供應(yīng)商 更新時(shí)間2025-7-28 16:30:00

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