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首頁>IRF1104L>規(guī)格書詳情

IRF1104L中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRF1104L
廠商型號

IRF1104L

功能描述

HEXFET Power MOSFET

文件大小

208.86 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-7-10 23:00:00

人工找貨

IRF1104L價格和庫存,歡迎聯(lián)系客服免費人工找貨

IRF1104L規(guī)格書詳情

VDSS = 40V

RDS(on) = 0.009?

ID = 100A

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is

suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Advanced Process Technology

Ultra Low On-Resistance

Surface Mount (IRF1104S)

Low-profile through-hole (IRF1104L)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

產(chǎn)品屬性

  • 型號:

    IRF1104L

  • 功能描述:

    MOSFET N-CH 40V 100A TO-262

  • RoHS:

  • 類別:

    分離式半導體產(chǎn)品 >> FET - 單

  • 系列:

    HEXFET®

  • 標準包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點:

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應商設備封裝:

    TO-220FP

  • 包裝:

    管件

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