IR21531S屬于集成電路（IC）的柵極驅(qū)動器。由英飛凌科技股份公司制造生產(chǎn)的IR21531S柵極驅(qū)動器柵極驅(qū)動器電源管理集成電路 (PMIC) 可用于提供隔離、放大、參考位移、自舉或其他必要功能，這些功能可將來自電源轉(zhuǎn)換應用中控制設(shè)備的信號連接到電源被控制通過的半導體設(shè)備（通常為 FET 或 IGBT）。任何特定設(shè)備提供的確切功能各不相同，但與它適合驅(qū)動的半導體配置相關(guān)。

描述 Description

The IR21531D(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

特性 Features

? Integrated 600V half-bridge gate driver

? 15.6V zener clamp on Vcc

? True micropower start up

? Tighter initial deadtime control

? Low temperature coefficient deadtime

? Shutdown feature (1/6th Vcc) on CT pin

? Increased undervoltage lockout Hysteresis (1V)

? Lower power level-shifting circuit

? Constant LO, HO pulse widths at startup

? Lower di/dt gate driver for better noise immunity

? Low side output in phase with RT

? Internal 50nsec (typ.) bootstrap diode (IR21531D)

? Excellent latch immunity on all inputs and outputs

? ESD protection on all leads

? Also available LEAD-FREE