描述 Description

The IR2125(S) is a high voltage, high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 500 volts.

特性 Features

? Floating channel designed for bootstrap operation

Fully operational to +500V

Tolerant to negative transient voltage

dV/dt immune

? Gate drive supply range from 12 to 18V

? Undervoltage lockout

? Current detection and limiting loop to limit driven

power transistor current

? Error lead indicates fault conditions and programs

shutdown time

? Output in phase with input

? 2.5V, 5V and 15V input logic compatible

? Also available LEAD-Free