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IRFP140

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES ?DrainCurrent–ID=31A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) ?SOAispowerdissipati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP140

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP140A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP140A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP140N

PowerMOSFET(Vdss=100V,Rds(on)=0,052ohm,Id=33A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFP140N

33A,100V,0.040Ohm,N-ChannelPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.intersil.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

Intersil

Intersil Corporation

IRFP140N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP140NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IQDN-140

  • 制造商：

    BOWEI

  • 制造商全稱：

    BOWEI

  • 功能描述：

    IQDN series I/Q demondulator

供應(yīng)商型號品牌批號封裝庫存備注價格
BOWEI
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IQD
24+/25+
500
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
Infineon
23+
PG-TSON-8
15500
英飛凌優(yōu)勢渠道全系列在售
 詢價
Infineon/英飛凌
25+
原廠封裝
10280
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！
 詢價
NK/南科功率
2025+
DFN5X6
986966
國產(chǎn)
 詢價
Infineon(英飛凌)
2447
PG-TSON-8
315000
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
Infineon/英飛凌
2021+
PG-TSON-8
9600
原裝現(xiàn)貨，歡迎詢價
 詢價
Infineon/英飛凌
24+
PG-TSON-8
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
Infineon/英飛凌
24+
PG-TSON-8
30000
原裝正品公司現(xiàn)貨,假一賠十!
 詢價
Infineon/英飛凌
21+
PG-TSON-8
6820
只做原裝,質(zhì)量保證
 詢價
更多IQDN-140供應(yīng)商 更新時間2025-7-28 16:48:00

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