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IPW65R190CFD

Marking：65F6190；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

IPW65R190CFD

N-Channel MOSFET Transistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IPW65R190CFD

650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

IPW65R190CFD

500V-900V CoolMOS? N-Channel Power MOSFET; ? 650V technology with integrated fast body diode\n? Limited voltage overshoot during hard commutation\n? Significant Qg reduction compared to 600V CFD technology\n? Tighter RDS(on) max to RDS(on) typ window\n? Easy to design-in\n? Lower price compared to 600V CFD technology\n\n優(yōu)勢:\n? Low switching losses due to low Qrr at repetitive commutation on body diode\n? Self limiting di/dt and dv/dt\n? Low Qoss\n? Reduced turn on and turn of delay times\n? Outstanding CoolMOS? quality\n;

Replacement for 650V CoolMOS? CFD2?is 600V CoolMOS? CFD7\n 650V CoolMOS? CFD2 is Infineon's second generation of market leading high voltage CoolMOS? MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.\n

IPW65R190CFD7A

Marking：65A190F7；Package：PG-TO247-3；650V CoolMOS? CFD7A SJ Power Device

MOSFET 650VCoolMOS?CFD7ASJPowerDevice 650VCoolMOS?CFD7AisInfineonslatestgenerationofmarketleadingautomotivequalifiedhighvoltageCoolMOS?MOSFETs. Potentialapplications SuitableforPFCandDC-DCstagesfor: ?UnidriectionalandbidirectionalDC-DCconverters, ?On-Boardba

IPW65R190CFDA

20V-650V汽車級MOSFET; ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of delay times\n? Compliant to AEC Q101 standard\n\n優(yōu)勢:\n? Increased safety margin due to higher breakdown voltage\n? Reduced EMI appearance and easy to design in\n? Better light load efficiency\n? Lower switching losses\n? Higher switching frequency and/or higher duty cycle possible\n? High quality and reliability\n;

650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provides also an integrated fast body diode.\n

IPW65R190CFD7A

650V CoolMOS? N 溝道汽車級SJ 功率 MOSFET CFD7A; \n優(yōu)勢:\n? 在滿足汽車壽命要求方面具有行業(yè)最高可靠性\n? 實現(xiàn)更高功率密度設計\n? 可擴展設計用于 PFC 和 DC-DC 級\n? 提供豐富的產(chǎn)品組合\n;

IPW65R190CFDA

Metal Oxide Semiconductor Field Effect Transistor